Gallium nitride power devices

"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be d...

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Bibliographic Details
Other Authors Yu, Hongyu, 1976- (Editor), Duan, Tianli (Editor)
Format Electronic eBook
LanguageEnglish
Published Singapore : Pan Stanford Publishing, 2017.
Subjects
Power electronics.
Gallium nitride > Electric properties.
Semiconductors.
Gallium nitride.
elektronické knihy
electronic books
Online AccessFull text
ISBN9781315196626
131519662X
9781351767613
1351767615
9781523114351
1523114355
9781351767606
1351767607
9789814774093
981477409X
9781351767590
1351767593
Physical Description1 online resource (x, 298 pages) : illustrations

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