Gallium nitride power devices

"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be d...

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Bibliographic Details
Other Authors: Yu, Hongyu, 1976- (Editor), Duan, Tianli, (Editor)
Format: eBook
Language: English
Published: Singapore : Pan Stanford Publishing, 2017.
Subjects:
Power electronics.
Gallium nitride > Electric properties.
Semiconductors.
Gallium nitride.
elektronické knihy
electronic books
ISBN: 9781315196626
131519662X
9781351767613
1351767615
9781523114351
1523114355
9781351767606
1351767607
9789814774093
981477409X
9781351767590
1351767593
Physical Description: 1 online resource (x, 298 pages) : illustrations

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ikona NpovdaGlossary of Terms
Online Access: Online Resources

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