ZnO/Ag/SnO2 적층박막의 두께 변화에 따른 전기적, 광학적 특성 연구

• Published in: 대한금속·재료학회지, 57(5) pp. 324 - 327
• Main Authors: 김유성, 최진영, 박윤제, 최수현, 공영민, 김대일
• Format: Journal Article
• Language: Korean
• Published: 대한금속·재료학회 01.05.2019
• Subjects: 재료공학
• ISSN: 1738-8228; 2288-8241
• DOI: 10.3365/KJMM.2019.57.5.324

ZnO/Ag/SnO2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO2 50 nm films showed a higher figure of merit, 1.08 × 10-2 Ω-1, than the other films due to a high visible transmittance of 80.8% and a low resistivity of 1.21 × 10−4 Ωcm. From the observed results, it can be concluded that the ZnO 50 nm/Ag 10 nm/SnO2 50 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications. KCI Citation Count: 8