Evaluation of the Built-in Voltage of a Au/ -GaAs Schottky Barrier Diode by Using Electroreflectance Spectroscopy
The built-in voltage (Vbi) of a Au/n-GaAs Schottky barrier diode was examined by using electroreflectance(ER) spectroscopy. The ER spectra were measured at various modulation voltages(vac) and dc bias voltages (Vbias). The interface electric fields (Ei) were obtained from the observedFranz-Keldysh o...
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| Published in | Journal of the Korean Physical Society pp. 406 - 411 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
한국물리학회
01.02.2018
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0374-4884 1976-8524 |
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| Summary: | The built-in voltage (Vbi) of a Au/n-GaAs Schottky barrier diode was examined by using electroreflectance(ER) spectroscopy. The ER spectra were measured at various modulation voltages(vac) and dc bias voltages (Vbias). The interface electric fields (Ei) were obtained from the observedFranz-Keldysh oscillations (FKO) in the ER spectra. When vac was increased, the amplitudes ofthe ER spectra varied linearly, but the line shapes of the ER spectra did not change. Ei decreasedfrom 19.3 × 104 V/cm to 4.39 × 104 V/cm with increasing Vbias from −0.5 V to 0.6 V. From therelationship between Vbias and E2i , the Vbi and the carrier concentration (n) were found to be 0.70 Vand 2.4 × 1016 cm−3, respectively. KCI Citation Count: 1 |
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| ISSN: | 0374-4884 1976-8524 |