Investigation of Sintering Temperature Effect on Structural, Dielectric, Electrical and Ferroelectric Behavior of Multielement (Cs, Mn, W) Modifi ed BiFeO3 Complex Perovskite for Thermistor Device

• Published in: Transactions on electrical and electronic materials pp. 147 - 160
• Main Authors: Sudhansu Sekhar Hota, Debasish Panda, Ram Naresh Prasad Choudhary
• Format: Journal Article
• Language: English
• Published: 한국전기전자재료학회 01.02.2025
• Subjects: 전기공학
• ISSN: 1229-7607; 2092-7592
• DOI: 10.1007/s42341-024-00558-9

Some types of ferrites have garnered notable attention lately due to their versatility in various applications. This paper reports the influence of sintering effect on dielectric and electrical characteristics of (Bi1/2 Cs1/2 )(Fe1/3 Mn1/3 W1/3 )O3 (BCsFMWO) compound, prepared by a solid-state reaction method. An increase in atomic kinetic mobility promotes grain development and crystallization improvement. Furthermore, the sintering temperature primarily influenced the dielectric loss and dielectric constant of the ceramic. The ceramic with high density exhibit reduced dielectric losses and fewer internal defects, essential for the optimal performance of electrical devices. The impedance response suggests a dielectric relaxation pattern that deviates from the Debye model. Meanwhile, the conductivity analysis, based on Jonscher’s power law, reveals the existence of a specific conduction mechanism. A polarization study with the hysteresis loop was done to confirm the dominance of the ferroelectric contribution over the sintered one. The value of α (temperature coefficient of resistance) is nearly -1.2%/°C at 350°C, which strongly supports the use of the material for temperature-based sensors. The temperature coefficient of resistance signifies its use in high-temperature sensor devices. The sintering process causes the Ohmic behavior of the sample to disappear at low voltages, as well as trap-filled SCLC conduction behavior. The probable causes of all of the foregoing observations were discussed. KCI Citation Count: 0