Temperature dependence analysis of Magnetic Tunnel junction Performance Parameters using Diff erent Halide Nanocomposite Materials

• Published in: Transactions on electrical and electronic materials pp. 60 - 68
• Main Authors: Seema Kumari, Rekha Yadav
• Format: Journal Article
• Language: English
• Published: 한국전기전자재료학회 01.02.2025
• Subjects: 전기공학
• ISSN: 1229-7607; 2092-7592
• DOI: 10.1007/s42341-024-00564-x

In recent years, magnetic tunnel junction (MTJ) devices have gained popularity, which makes it necessary to analyze various effects on MTJs. Several new and innovative applications of spintronic devices have been introduced with 2D materials. A study has been conducted on an MTJ device that consists of 2 ferromagnetic layers and a composite dielectric. The dielectric layer of the proposed MTJ memory device is composed of Cs2 AgBiCl6, Cs2 AgBiBr6, and Cs2 CuBiBr6. This work presents and compares the composite dielectric layer (CDL) consisting of MgO–Cs2 AgBiCl6/Cs2 AgBiBr6/Cs2 CuBiBr6–MgO. MTJ devices including Fe–CDL–Fe and CoFeB–CDL–CoFeB exhibit greater switching currents and TMR ratios compared to those utilizing Fe–MgO–Fe. This study also examines the temperature-dependent analysis of MTJ. The parallel resistance slightly increases as Temperature increases but antiparallel resistance decreases as temperature increases. The TMR of MTJ decreases as temperature increases and vice versa. The TMR(%) of Fe-MgO-Cs 2 AgBiBr 6-based MTJ reduced to 242% at 1000K. The power consumption of Fe–MgO–Cs2 AgBiBr 6–Fe-based MTJ devices is lowest as compared to other halide double perovskites. For all the MTJ models examined Cs2 AgBiBr 6 MTJ models with Fe-based ferromagnetic layer showed the highest TMR ratio. The TMR (%) of Fe–MgO–Cs2 AgBiBr6 is 1137% and 1839% at room temperature and 13 K respectively. KCI Citation Count: 0