High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon

We demonstrate 1.3 µm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).

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Bibliographic Details
Published inOFC 2014 pp. 1 - 3
Main Authors Liu, Alan Y., Zhang, Chong, Snyder, Andrew, Lubychev, Dimitri, Fastenau, Joel M., Liu, Amy W.K., Gossard, Arthur C., Bowers, John E.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.03.2014
Subjects
Gallium arsenide
Quantum dot lasers
Silicon
Substrates
Surface emitting lasers
Waveguide lasers
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DOI10.1364/OFC.2014.W4C.5

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Summary:We demonstrate 1.3 µm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).
DOI:10.1364/OFC.2014.W4C.5