MONOCRYSTALLINE THREE-DIMENSIONAL INTEGRATED CIRCUIT

• Main Authors: SCHRIMPF, RONALD, D, WARNER, RAYMOND, M.,JR, TUSZYNSKI, ALFONS
• Format: Patent
• Language: English
• Published: 02.06.1988
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation.