HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION AND MANUFACTURING PROCESS

• Main Authors: MALAGNINO, Nunzia, LAGO, Emanuele, RICCARDI, Damiano
• Format: Patent
• Language: English
• Published: 30.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A body of semiconductor material has a surface and accommodates an active area, conductive regions, a first deep insulation structure extending in the active area from the surface of the body in a first trench, and a second deep insulation structure extending in the active area from the surface of the body in a second trench and surrounding the conductive regions. The first deep insulation structure has insulation walls surrounding a conductive filling portion. The second deep insulation structure has a solid insulating region filling the second trench. The first deep insulation region has a first width and a first depth and the second deep insulation structure has a second width and a second depth. The second width is smaller than the first width and the second depth is smaller than the first depth.