GaAs1-xSbx nanowires on a graphitic substrate

The presently disclosed subject matter relates generally to GaAs1−xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

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Bibliographic Details
Main Authors Li, Jia, Iyer, Shanthi, Nalamati, Surya Ratna Kiran
Format Patent
LanguageEnglish
Published 12.07.2022
Subjects
ADHESIVES
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
DYES
INORGANIC CHEMISTRY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NANOTECHNOLOGY
NATURAL RESINS
NON-METALLIC ELEMENTS
PAINTS
PERFORMING OPERATIONS
POLISHES
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:The presently disclosed subject matter relates generally to GaAs1−xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
Bibliography:Application Number: US202017038175