Low noise amplifier drain switch circuit

Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a seco...

Full description

Saved in:
Bibliographic Details
Main Author CAMPBELL, CHARLES F
Format Patent
LanguageChinese
English
Published 16.12.2015
Subjects
AMPLIFIERS
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Online AccessGet full text

Cover

More Information
Summary:Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a second FET. The drain contact of the second FET may also be coupled with the gate of the second FET through a resistor. The source contact of the second FET may be coupled with a diode which may be coupled with an LNA.
Bibliography:Application Number: TW20150108592