POROUS FILM, ITS PRODUCTION AND ARTICLE

PROBLEM TO BE SOLVED: To obtain an insulation film having low permittivity and excellent moisture absorption resistance on an article such as a semiconductor device by heat-treating a film of a uniformly compatibilized composite material of a condensate of a partial hydrolyzate of an alkoxysilane wi...

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Main Authors MATSUKURA IKUO, NARITA TAKENORI, NOBE SHIGERU, YOKOZUKA TOSHISUKE, MORISHIMA HIROYUKI, YAMAMOTO YASUHIRO, ENOMOTO KAZUHIRO
Format Patent
LanguageEnglish
Published 10.08.1999
Edition6
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Summary:PROBLEM TO BE SOLVED: To obtain an insulation film having low permittivity and excellent moisture absorption resistance on an article such as a semiconductor device by heat-treating a film of a uniformly compatibilized composite material of a condensate of a partial hydrolyzate of an alkoxysilane with a resin at a temperature equal to or higher than the heat decomposition temperature of the resin. SOLUTION: The hydrolyzate (component 13) of a partial hydrolyzate of an alkoxysilane is represented by the formula (wherein R and R are each a nonhydrolyzable group; R is an alkyl; and m and n are integers of 0-3 satisfying 0<=m+n<=3). The resin (component A) is a fluorine-containing resin or a fluorine-free resin having a specified proportion of functional groups capable of crosslinking with convponent B or a coupling agent and having a relative permittivity of 3 or below. When a fluorine-containing resin is used as component A, component B is desirably one containing a specified proportion of a condensate of a hydrolyzate of a fluorine- containing alkoxysilane in respect of compatibility and mechanical strengths. A solution of a mixture of components A and [3 is prepared, an aminosilane as a coupling agent is added to the solution, and the resultant solution is applied to an article such as a semiconductor element, and dried to form a film, and the film is heat-treated to form a porous film.
Bibliography:Application Number: JP19980023140