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Summary:PROBLEM TO BE SOLVED: To provide multi-layer graphene wiring and a semiconductor device having the multi-layer graphene wiring.SOLUTION: Wiring includes a substrate, a metal film provided on the substrate, a metal portion provided on the metal film, and graphene wiring formed on the metal portion. The graphene wiring is electrically in contact with the metal film, and the metal film and the metal portion are composed of different metal or alloys.
Bibliography:Application Number: JP20110258098