APPARATUS FOR GROWING OXIDE SINGLE CRYSTAL

• Main Author: WAKABAYASHI HIROKO
• Format: Patent
• Language: English
• Published: 11.08.2005
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To solve the problem that a grown crystal becomes an uneven crystal containing cell growth or a fine light-scattering material at the inside because the temperature gradient is small at the solid-liquid interface position during growth in a conventional apparatus for growing a lithium tetraborate single crystal. SOLUTION: This apparatus for growing the lithium tetraborate single crystal is characterized in that a cylindrical heat insulating part is arranged between the inner wall face of a furnace core tube heated by a heater and an area where a growth vessel moves and at the position of the solid-liquid interface with regard to the height direction. COPYRIGHT: (C)2005,JPO&NCIPI