Cavity of reaction chamber structure for solar cell dry process making herbs into wool technology

• Main Authors: JIA YUNTAO, TAN XINGBO, HUANG PEIEN, SHANGGUAN QUANYUAN
• Format: Patent
• Language: English
• Published: 28.10.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The utility model belongs to the technical field of solar wafer makes equipment, plasma etching, vacuum reaction chamber technique and specifically relates to a cavity of reaction chamber structure for solar cell dry process making herbs into wool technology. The cavity main part is assembled the welding by polylith corrosion resistant plate material and is formed the surperficial spraying plating teflon coating of corrosion resistant plate material, teflon coating surface mosaic detachable aluminum alloy inside lining armor board. Teflon coating is PTFE, PFA, or FEP material. The corrosion resistant plate material is the stainless steel through sand -blast treating. Aluminum alloy inside lining armor board is aluminum plate or the surface inside lining armor board through the deep oxidation processing. The utility model discloses reduce the processing degree of difficulty, reduced the expense of handing over, warp for a short time under bearing the vacuum pressure of large -scale cavity, easy dismounting can effectively solve reaction chamber and the problem of the family of power and influence with other cavity connection difficulties, aluminum alloy inside lining armor board has chemical resistance, can effectively block the bombardment of high energy particle to the coating to can not cause metal ion to pollute to the silicon chip.