Radio frequency silicon on insulator wafer stage

The invention relates to radio frequency silicon on an insulator wafer platform. A semiconductor-on-insulator (e.g., silicon-on-insulator) structure with superior radio frequency device performance and a method of making the structure are provided by utilizing a monocrystalline silicon handling wafe...

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Bibliographic Details
Main Authors SECRIST, MICHAEL, R, LIBBERT JEFFREY L, SREEDHARAMURTHY, HARISH, STANDLEY ROBERT W, JENSEN, LARS
Format Patent
LanguageChinese
English
Published 26.11.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to radio frequency silicon on an insulator wafer platform. A semiconductor-on-insulator (e.g., silicon-on-insulator) structure with superior radio frequency device performance and a method of making the structure are provided by utilizing a monocrystalline silicon handling wafer sliced from a floating region growing monocrystalline silicon ingot. 本公开涉及绝缘体晶片平台上的射频硅。通过利用从浮区生长单晶硅锭切片的单晶硅处置晶片来提供一种具有优越射频装置性能的绝缘层上半导体(例如，绝缘层上硅)结构及一种制备此结构的方法。
Bibliography:Application Number: CN202411149823