基于场效应晶体管结构的光电免疫检测设备及其制造方法

• Format: Patent
• Language: Chinese
• Published: 08.08.2025
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

本发明公开了一种基于场效应晶体管结构的光电免疫检测设备及其制造方法，该设备利用了间接免疫荧光测定方法，将光信号转换成电信号对抗原进行检测；该设备由场效应晶体管、硅光波导环形谐振器、储液槽三部分构成，三部分均在同一个绝缘层上硅衬底上制备而成；绝缘层上硅膜刻蚀形成硅光波导环形谐振器，硅光波导环形谐振器的直波导的一端作为光输入端口与储液槽相连，另一端作为光输出端口与场效应晶体管的沟道相连；储液槽表面进行修饰，用于滴加待检测样品并固定样品中抗原。本发明可以很好的将免疫检测与集成电路制造工艺结合，降低检测成本以及操作难度。 The invention discloses photoelectric immunodetection equipment based on a field effect transistor structure and a manufacturing method of the photoelectric immunodetection equipment, and the photoelectric immunodetection equipment utilizes an indirect immunofluorescence determination method to convert an optical signal into an electric signal to detect an antigen; the device is composed of a field effect transistor, a silicon optical waveguide annular resonator and a liquid storage tank, and the three parts are prepared on a silicon substrate on the same insulating layer. The silicon film on the insulating layer is etched to form a silicon optical waveguide ring resonator, one end of a straight waveguide of the silicon optical waveguide ring resonator s