一种具有三角形埋层的绝缘层上硅LDMOS晶体管

• Format: Patent
• Language: Chinese
• Published: 05.07.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

本发明公开了一种具有三角形埋层的绝缘层上硅LDMOS晶体管，衬底层上面为全埋氧层；全埋氧层上面为硅膜层；硅膜层包括源区、硅体、漂移区、漏区和三角埋氧层；源区和硅体位于硅膜层一侧，硅体包围源区，且源区位于硅膜层顶部；漏区位于硅膜层另一侧顶部；漏区、硅体和三角埋氧层之间的区域为漂移区；三角埋氧层位于全埋氧层上方；沟道由源区和漂移区之间的硅体提供；栅氧化层位于沟道和漂移区上方；扩展氧化层位于漂移区上方；扩展氧化层和栅氧化层的两个相邻侧面接触；栅氧化层被栅电极全部覆盖，扩展氧化层被栅电极部分覆盖；源电极位于源区上方，漏电极位于漏区上方。本发明的击穿电压和导通电阻性能更加优越。 The invention discloses a silicon-on-insulator LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor with a triangular buried layer. A fully buried oxide layer is arranged on a substrate layer; a silicon film layer is arranged on the fully buried oxide layer; the silicon film layer comprises a source region, a silicon body, a drift region, a drain region and a triangular buried oxide layer; the source region and the silicon body are located at one side of the silicon film layer, the silicon body surrounds the source region, and the source region is located at the top of the silicon film layer; the drain region is located at the top of the other side of the silicon film layer; a region among the drain region, the sili