电荷泵电路装置

一种电荷泵电路装置包括通过非重叠的时钟脉冲(CLK1、CLK2)控制的第一组和第二组的多个电容器(110、111、112、113)。电容器部分地实现在半导体衬底中,该半导体衬底包括深阱掺杂区和由该深阱掺杂区包围的高电压掺杂区。开关(324、325)连接到一对电容器,以利用与相应的时钟信号(CLK1、CLK2)同相的信号(CTRL1、CTRL2)来控制深阱掺杂区。 A charge pump circuit arrangement comprises a multitude of capacitors (110, 111, 112, 113) of a first and a second gr...

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Format Patent
LanguageChinese
Published 13.08.2024
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Summary:一种电荷泵电路装置包括通过非重叠的时钟脉冲(CLK1、CLK2)控制的第一组和第二组的多个电容器(110、111、112、113)。电容器部分地实现在半导体衬底中,该半导体衬底包括深阱掺杂区和由该深阱掺杂区包围的高电压掺杂区。开关(324、325)连接到一对电容器,以利用与相应的时钟信号(CLK1、CLK2)同相的信号(CTRL1、CTRL2)来控制深阱掺杂区。 A charge pump circuit arrangement comprises a multitude of capacitors (110, 111, 112, 113) of a first and a second group controlled by non-overlapping clock pulses (CLK1, CLK2). The capacitors are partly realized in a semiconductor substrate including a deep well doping region and a high voltage doping region surrounded by the deep well doping region. Switches (324, 325) are connected to a pair of capacitors to control the deep well doping regions with signals (CTRL1, CTRL2) in phase with the corresponding clock signal (CLK1, CLK2).
Bibliography:Application Number: CN20198031188