半导体存储装置及其制造方法

• Format: Patent
• Language: Chinese
• Published: 24.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

提供了一种半导体存储装置及其制造方法。制造其中堆叠有多个存储器裸片的半导体存储装置的方法包括在晶片上形成第一存储器裸片。在其上形成有第一存储器裸片的晶片上沉积底部填充材料，以形成底部填充层的第一部分。通过执行半锯切工艺去除底部填充层的留在第一存储器裸片的顶表面上的第一部分，并且在去除底部填充层的第一部分期间，去除第一存储器裸片的边缘部分的一部分，以形成第一空腔。在第一存储器裸片上形成第二存储器裸片。在包括形成在其上的第二存储器裸片的晶片上沉积底部填充材料，以形成底部填充层的第二部分。 A method of manufacturing a semiconductor memory apparatus, in which a plurality of memory dies are stacked, includes forming first memory dies on a wafer. An under-fill material is deposited on a wafer, on which the first memory dies are formed, to form a first part of an under-fill layer. A first portion of the under-fill layer remaining on top surfaces of the first memory dies is removed by performing a half sawing process, and parts of edge portions of the first memory dies are removed during the removal of the first portion of the under-fill layer to form first cavities. Second memory dies are formed on the first memory dies. The under-fill material is deposited on the wafer including the second memory dies formed thereon to form a second part of the under-fill la