制造太阳能电池的方法

• Format: Patent
• Language: Chinese
• Published: 27.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

公开了一种制造太阳能电池的方法。该制造太阳能电池的方法包括以下步骤：在半导体基板的表面上沉积本征非晶硅层；在所述本征非晶硅层上沉积包含杂质的非晶硅层以形成导电区域；以及形成与所述导电区域电连接的电极。沉积本征非晶硅层的步骤包括以0.5nm/秒至2.0nm/秒的沉积速率在所述半导体基板的表面上沉积所述本征非晶硅。 A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer (111, 112) on a surface of a semiconductor substrate (110), depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region (120, 170), and forming an electrode (131, 132, 140, 150) electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.