绝缘层上顶层硅衬底及其制造方法

• Format: Patent
• Language: Chinese
• Published: 24.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

本发明提出了一种绝缘层上顶层硅衬底的制造方法，包括：提供一第一半导体衬底；在该第一半导体衬底的顶面形成一第一绝缘层；对该第一半导体衬底注入氢离子束，以便在距离该第一绝缘层的顶面的预定深度处形成一氢掺杂层；提供一第二半导体衬底；在该第二半导体衬底的顶面形成一第二绝缘层；将该第一半导体衬底面对面地接合于该第二半导体衬底；在一重氢气压环境下，对该第一半导体衬底以及该第二半导体衬底进行退火；以及将部分的第一半导体衬底分离于该第二半导体衬底，以便在该第二半导体衬底之上形成一掺杂有重氢的半导体层。 This invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate; growing a first insulating layer on a top surface of the first semiconductor substrate for forming a first wafer; irradiating the first semiconductor substrate via a ion beam for forming a doping layer to a pre-determined depth from a top surface of the first insulating layer; providing a second substrate; growing a second insulating layer on a top surface of the second semiconductor substrate for forming a second wafer; bonding the first wafer with the second wafer; annealing the first wafer and second wafer at a deuterium atmosphere; separating a part of the first wafer from the second wafer; and forming a deuterium do