绝缘层上顶层硅衬底及其制造方法

• Format: Patent
• Language: Chinese
• Published: 20.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

本发明提供一种绝缘层上顶层硅衬底的制造方法，包括：提供一第一半导体衬底；在该第一半导体衬底的顶面形成一第一绝缘层；对该第一半导体衬底进行离子束注入，以便在距离该第一绝缘层的顶面的预定深度处形成一重氢与氢气掺杂层；提供一第二半导体衬底；在该第二半导体衬底的顶面形成一第二绝缘层；将该第一半导体衬底面对面地接合于该第二半导体衬底；对该第一半导体衬底以及该第二半导体衬底进行退火；以及将部分的第一半导体衬底与该第二半导体衬底分离，以便在该第二半导体衬底上形成一掺杂有重氢与氢气的半导体层。 The present invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate; growing a first insulating layer on a top surface of the first semiconductor substrate for forming a first wafer; implanting a deuterium and hydrogen co-doping layer at a certain pre-determined depth of the first wafer; providing a second substrate; growing a second insulating layer on a top surface of the second semiconductor substrate for forming a second wafer; bonding the first wafer with the second wafer; annealing the first wafer and second wafer; separating a part of the first wafer from the second wafer; and forming a deuterium and hydrogen co-doping semiconductor layer on the second wafer.