The etching method, an etching apparatus, and a storage medium

SUBJECT of the InventionIt maintains at the predetermined range which was able to determine the elution component concentration in the etching liquid eluted from a wafer without carrying out total replacement of the etching liquid, and performs an etching process precisely with respect to a wafer.PR...

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Bibliographic Details
Main Authors Furukawa, Takahiro, Kawazu, Takahiro, Sato, Hideaki, Futamata, Yusuke, Sato, Takami, Shiokawa, Toshiyuki, Hara, Hiromi
Format Patent
LanguageJapanese
Published 02.11.2017
Subjects
JP
WAFER
SEMICONDUCTOR
SET
PERFORMANCE
THIRD
LIQUID
PORTION
OBJECT
DISCHARGE
ETCH
PATTERN
AMOUNT
PROCESS
METHOD
REPLACE
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Summary:SUBJECT of the InventionIt maintains at the predetermined range which was able to determine the elution component concentration in the etching liquid eluted from a wafer without carrying out total replacement of the etching liquid, and performs an etching process precisely with respect to a wafer.PROBLEM to be solvedThe etching method is several etch process,The interval process between each etch processThese are provided.Only the 1st set amount discharges|emits the etching liquid which was provided to the etching process, and each etch process contains the 1st part replacement|exchange pattern in which only the 2nd set amount supplies novel etching liquid.Only the 3rd set amount discharges|emits the etching liquid which was provided to the etching process, and an interval process contains the 2nd part replacement|exchange pattern in which only the 4th set amount supplies novel etching liquid.SELECTED DRAWINGSFIG. 2