Proton radiation effect on GaAs/AIGaAs core-shell ensemble nanowires photo-detector

We demonstrate that the GaAs/AlGaAs nanowires（NWs） ensemble is fabricated into photo-detectors. Current–voltage（I–V） characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~（13） cm...

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Bibliographic Details
Published in中国物理B：英文版 Vol. 26; no. 8; pp. 333 - 336
Main Author 谭丽英 黎发军 谢小龙 周彦平 马晶
Format Journal Article
LanguageEnglish
Published 2017
Subjects
GaAs／AlGaAs
光电探测器
光电检测器
核壳
纳米线
质子辐照
载流子迁移率
集成
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ISSN1674-1056
2058-3834

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Summary:We demonstrate that the GaAs/AlGaAs nanowires（NWs） ensemble is fabricated into photo-detectors. Current–voltage（I–V） characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~（13） cm~（-2） to 5.0 × 10~（14） cm~（-2）. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.
Bibliography:Li-Ying Tan, Fa-Jun Li, Xiao-Long Xie, Yan- Ping Zhou, and Jing Ma（ National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China）
11-5639/O4
We demonstrate that the GaAs/AlGaAs nanowires（NWs） ensemble is fabricated into photo-detectors. Current–voltage（I–V） characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~（13） cm~（-2） to 5.0 × 10~（14） cm~（-2）. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.
radiation effect, lifetime damage coefficient, mobility damage coefficient, radiation damage
ISSN:1674-1056
2058-3834