A novel enhancement mode AIGaN/GaN high electron mobility transistor with split floating gates

A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polari...

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Bibliographic Details
Published in中国物理B：英文版 Vol. 26; no. 4; pp. 420 - 424
Main Author 王辉 王宁 蒋苓利 林新鹏 赵海月 于洪宇
Format Journal Article
LanguageEnglish
Published 2017
Subjects
AlGaN/GaN
FGS
HEMT
MIS结构
增强型
浮栅
电荷面密度
高电子迁移率晶体管
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ISSN1674-1056
2058-3834

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Summary:A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polarization sheet charge density and the tunnel dielectric（between FGs and AlGaN） thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric（between FGs and control gate） thickness.In the case of the same gate length,the V_（th） will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.
Bibliography:A1GaN/GaN, high electron mobility transistor, split floating gates, enhancement mode
11-5639/O4
Hui Wang1,2, Ning Wang1,2, Ling-Li Jiang1,2, Xin-Peng Lin1,2, Hai-Yue Zhao1,2, and Hong-Yu Yu1,2（1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China 2 Shenzhen Key Laborary of the Third Generation Semiconductor, Shenzhen 518055, China）
A novel enhancement-mode AlGaN/GaN high electron mobility transistor（HEMT） is proposed and studied.Specifically,several split floating gates（FGs） with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_（th） decreases with the increase of polarization sheet charge density and the tunnel dielectric（between FGs and AlGaN） thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric（between FGs and control gate） thickness.In the case of the same gate length,the V_（th） will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.
ISSN:1674-1056
2058-3834