The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH_4/NH_3/N_2 plasmas： Two-dimensional simulations

A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the pres...

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Bibliographic Details
Published in中国物理B：英文版 no. 4; pp. 338 - 343
Main Author 刘相梅 宋远红 姜巍 易林
Format Journal Article
LanguageEnglish
Published 2013
Subjects
SiH4
二维模拟
反应系数
无线电频率
流体模型
电子密度分布
等离子体特性
耦合等离子体
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ISSN1674-1056
2058-3834

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Summary:A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.
Bibliography:11-5639/O4
capacitively coupled plasma; process conditions effects; SiH4/NH3/N2 discharges
Liu Xiang-Mei , Song Yuan-Hong , Jiang Wei , Yi Lin （a） School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China b） School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.
ISSN:1674-1056
2058-3834