Influence of defect states on band gaps two-dimensional phononic crystal in the of4340 steel in an epoxy
The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calcula...
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| Published in | 中国物理B：英文版 Vol. 21; no. 9; pp. 400 - 403 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
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| Summary: | The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed. |
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| Bibliography: | The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed. defect state, band width, number of band gap 11-5639/O4 Kong Xiao-Yan, Yue Lei-Lei, then Yu, and Liu Ying-Kai Institute of Physics and Electronic Information, Yunnan Normal University, Kunming 650092, China |
| ISSN: | 1674-1056 2058-3834 |