Theoretical study of the SiO_2/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Two SiO_2/Si interface structures,which are described by the double bonded model（DBM） and the bridge oxygen model（BOM）,have been theoretically studied via first-principle calculations.First-principle simulations demonstrate that the width of the transition region for the interface structure describe...

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Bibliographic Details
Published inJournal of semiconductors no. 8; pp. 11 - 15
Main Author 朱晖文 刘咏松 毛凌峰 沈静琴 朱志艳 唐为华
Format Journal Article
LanguageChinese
Published 2010
Subjects
MOSFET
剖面
栅极
电流差
界面结构
第一原理计算
能带
隧道效应
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ISSN1674-4926

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Summary:Two SiO_2/Si interface structures,which are described by the double bonded model（DBM） and the bridge oxygen model（BOM）,have been theoretically studied via first-principle calculations.First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM.Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO_2/Si interface structure described by DBM leads to a larger gate leakage current.
Bibliography:gate tunneling current
TU852
TN386.1
interface; MOSFETs; gate tunneling current
interface
11-5781/TN
MOSFETs
ISSN:1674-4926