Metal-Oxide-High-[Formula Omitted] Dielectric-Oxide-Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

• Published in: IEEE electron device letters Vol. 28; no. 11; pp. 964 - 966
• Main Authors: Hsu, Hsin-hao, Chang, Yin-ku, Lee, J.Y.-M
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.11.2007
• Subjects: Aluminum; Dielectrics; Hafnium oxide; Programming; Semiconductor devices; Silicon; Silicon dioxide; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2007.906797

Metal-oxide-high-@@ikappa@ dielectric-oxide-silicon capacitors and transistors are fabricated using HfO@@d2@ and Dy@@d2@O@@d3@ high-@@ikappa@ dielectrics as the charge storage layer. The programming speed of Al/SiO@@d2@/Dy@@d2@O@@d3@/ SiO@@d2@/Si transistor is characterized by a Delta@@iV@ @@dth@ shift of 1.0 V with a programming voltage of 12 V applied for 10 ms. As for retention properties, the Al/SiO@@d2@/Dy@@d2@O@@d3@/ SiO@@d2@/Si transistors can keep a Delta@@iV@ @@dth@ window of 0.5 V for 2 times10@@u8@ s. The corresponding numbers for Al/ SiO@@d2@/HfO@@d2@/SiO@@d2@/Si transistors are 100 ms and 2 times10@@u4@ s, respectively. The better performance of the Al/SiO@@d2@/Dy@@d2@O@@d3@/ SiO@@d2@/Si transistors is attributed to the larger conduction band offset at the Dy@@d2@O@@d3@/SiO@@d2@ interface.