HfO2 Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation

• Published in: IEEE transactions on electron devices Vol. 55; no. 10; pp. 2790 - 2794
• Main Authors: YUAN, Jiann-Shiun, CHUANZHAO YU
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.10.2008
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Intermodulation distortion; MOSFET; Breakdown (BD) location; Transistor gate; n channel; high-k transistors; Time dependence; Hot electron; MOS transistor; Intermodulation; Damaging; gate oxide breakdown; Gate voltage; Oxide layer; Third order; Radiofrequency; third-order intercept point; p channel; Intercept point; channel hot electron; Gate oxide; Analytical method; intermodulation distortion (IMD); radio frequency (RF); Leakage current; High k dielectric; Reliability
• ISSN: 0018-9383
• DOI: 10.1109/TED.2008.2003031