Effect of a ZnO Buffer Layer on the Structural, Optical and Electrical Properties of TIO/ZnO Bi-layered Films

• Published in: Biuletyn Uniejowski Vol. 52; no. 6; pp. 289 - 292
• Main Authors: Su-Hyeon Choe, Yun-Je Park, Jin-Young Choi, Daeil Kim
• Format: Journal Article
• Language: English
• Published: 한국표면공학회 01.12.2019
• Subjects: 기계공학; ZnO; Hall effect; Magnetron sputtering; TIO; Figure of merit
• ISSN: 1225-8024; 2299-8403; 2288-8403
• DOI: 10.5695/JKISE.2019.52.6.289

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates, to investigate the effect of the ZnO buffer layer on optical and electrical properties of resulting TIO/ZnO bi-layered thin films. TIO (90 nm) / ZnO (10 nm) films having a lower resistivity (3.09×10-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films, without intentional substrate heating or post-deposition annealing. KCI Citation Count: 0