Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting

• Published in: 전기학회 논문지 P권, 66(3) Vol. 66P; no. 3; pp. 129 - 134
• Main Authors: Su-Ho Lee(이수호), Young-Mun Kim(김영문), Hai-Jai Kim(김해재), Seok-Min Joo(주석민)
• Format: Journal Article
• Language: English
• Published: 대한전기학회 01.09.2017
• Subjects: 전기공학; Electron phonon coupling system; Equilibrium average projection scheme (EAPS); Si; Quantum transport theory; Response formula and the scattering factor formula; The quantum transition line shapes (QTLS) and the quantum transition line widths (QTLW)
• ISSN: 1229-800X; 2586-7792

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process , the inter-leval transition process , the phonon emission transition process and the phonon absorption transition process. KCI Citation Count: 0