Mutually-Actuated-Nano-Electromechanical (MANEM) Memory Switches for Scalability Improvement

Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability improvement. While conventional NEM memory switches have fixed electrode lines, the proposed MA-NEM memory switches have mutually-actuated cantilever-like electrode lines. Thus, MA-NEM memory switches show...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 17; no. 2; pp. 199 - 203
Main Authors Ho Moon Lee, Woo Young Choi
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.04.2017
Subjects
전기공학
nano-electromechanical switch
nonvolatility
CMOS-NEM hybrid circuit
scalability
Reconfigurable logic
Online AccessGet full text
ISSN1598-1657
2233-4866
DOI10.5573/JSTS.2017.17.2.199

Cover

More Information
Summary:Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability improvement. While conventional NEM memory switches have fixed electrode lines, the proposed MA-NEM memory switches have mutually-actuated cantilever-like electrode lines. Thus, MA-NEM memory switches show smaller deformations of beams in switching. This unique feature of MA-NEM memory switches allows aggressive reduction of the beam length while maintaining nonvolatile property. Also, the scalability of MA-NEM memory switches is confirmed by using finite-element (FE) simulations. MA-NEM memory switches can be promising solutions for reconfigurable logic (RL) circuits. KCI Citation Count: 1
Bibliography:G704-002163.2017.17.2.012
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2017.17.2.199