Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy

This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases o...

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Published inJournal of ceramic processing research pp. 61 - 65
Main Authors 원영종, 소병찬, 우서휘, 이동헌, 김민호, 남기범, 임수진, 심광보, 남옥현
Format Journal Article
LanguageEnglish
Published 청정에너지연구소 01.04.2014
Subjects
재료공학
Online AccessGet full text
ISSN1229-9162
2672-152X
DOI10.36410/jcpr.2014.15.2.61

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Abstract This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases of the GaN layer changed from non-polar to semi-polar (11-22) through mixed phases of (10-1-3) and (11-22). The phase change with nitridation was attributed to the formation of the nanosized AlN protrusions with slanted facets. This was confirmed by X-ray photoelectron spectroscopy and atomic force microscopy. KCI Citation Count: 5
AbstractList This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases of the GaN layer changed from non-polar to semi-polar (11-22) through mixed phases of (10-1-3) and (11-22). The phase change with nitridation was attributed to the formation of the nanosized AlN protrusions with slanted facets. This was confirmed by X-ray photoelectron spectroscopy and atomic force microscopy. KCI Citation Count: 5
Author 남기범
이동헌
임수진
원영종
남옥현
소병찬
김민호
우서휘
심광보
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Title Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy
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