Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy

• Published in: Journal of ceramic processing research pp. 61 - 65
• Main Authors: 원영종, 소병찬, 우서휘, 이동헌, 김민호, 남기범, 임수진, 심광보, 남옥현
• Format: Journal Article
• Language: English
• Published: 청정에너지연구소 01.04.2014
• Subjects: 재료공학
• ISSN: 1229-9162; 2672-152X
• DOI: 10.36410/jcpr.2014.15.2.61

This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases of the GaN layer changed from non-polar to semi-polar (11-22) through mixed phases of (10-1-3) and (11-22). The phase change with nitridation was attributed to the formation of the nanosized AlN protrusions with slanted facets. This was confirmed by X-ray photoelectron spectroscopy and atomic force microscopy. KCI Citation Count: 5