Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy
We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respective...
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| Published in | Journal of ceramic processing research pp. 1015 - 1018 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
청정에너지연구소
01.10.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1229-9162 2672-152X |
| DOI | 10.36410/jcpr.2016.17.10.1015 |
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| Abstract | We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrowx-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN.
The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN,which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis. KCI Citation Count: 3 |
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| AbstractList | We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrowx-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN.
The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN,which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis. KCI Citation Count: 3 |
| Author | 남옥현 김민호 소병찬 우서휘 심광보 |
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| Title | Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy |
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