Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy

We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respective...

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Bibliographic Details
Published inJournal of ceramic processing research pp. 1015 - 1018
Main Authors 김민호, 우서휘, 소병찬, 심광보, 남옥현
Format Journal Article
LanguageEnglish
Published 청정에너지연구소 01.10.2016
Subjects
재료공학
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ISSN1229-9162
2672-152X
DOI10.36410/jcpr.2016.17.10.1015

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Summary:We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrowx-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN. The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN,which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis. KCI Citation Count: 3
ISSN:1229-9162
2672-152X
DOI:10.36410/jcpr.2016.17.10.1015