김민호, 우서휘, 소병찬, 심광보, & 남옥현. (2016, October). Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy. Journal of ceramic processing research, 1015-1018. https://doi.org/10.36410/jcpr.2016.17.10.1015
Chicago Style (17th ed.) Citation김민호, 우서휘, 소병찬, 심광보, and 남옥현. "Defect Reduction in M-plane GaN on M-sapphire via Lateral Epitaxial Overgrowth by Hydride Vapor Phase Epitaxy." Journal of Ceramic Processing Research Oct. 2016: 1015-1018. https://doi.org/10.36410/jcpr.2016.17.10.1015.
MLA (9th ed.) Citation김민호, et al. "Defect Reduction in M-plane GaN on M-sapphire via Lateral Epitaxial Overgrowth by Hydride Vapor Phase Epitaxy." Journal of Ceramic Processing Research, Oct. 2016, pp. 1015-1018, https://doi.org/10.36410/jcpr.2016.17.10.1015.