터널 산화막 전하선택형 태양전지를 위한 인 도핑된 비정질 실리콘 박막의 패시베이션 특성 연구

• Published in: Current Photovoltaic Research Vol. 7; no. 4; pp. 125 - 129
• Main Authors: 이창현(Changhyun Lee), 박현정(Hyunjung Park), 송호영(Hoyoung Song), 이현주(Hyunju Lee), Yoshio Ohshita, 강윤묵(Yoonmook Kang), 이해석(Hae-Seok Lee), 김동환(Donghwan Kim)
• Format: Journal Article
• Language: Korean
• Published: 한국태양광발전학회 2019
• Subjects: 자연과학일반; Amorphous silicon layer; Carrier selective contact; Tunnel oxide passivated contact
• ISSN: 2288-3274; 2508-125X
• DOI: 10.21218/CPR.2019.7.4.125

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer's characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.