3가 크롬 박막 내의 극미세 결함 측정을 위한 중성자 소각 산란법의 적용

The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-...

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Published in한국표면공학회지 Vol. 37; no. 3; pp. 175 - 178
Main Authors 최용, Choi, Yong
Format Journal Article
LanguageKorean
Published 한국표면공학회 2004
Subjects
기계공학
Small angle neutron scattering
Chromium-carbon
Trivalent chromium bath
Online AccessGet full text
ISSN1225-8024
2288-8403

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Abstract The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-size defects less than about 40nm of the trivalent chromium layer increases with plating voltage at constant current density From this study, SANS is proved as one of useful techniques to evaluate nano-size defects of thin film layer.
AbstractList 전착된 3가 크롬 도금층 내의 극미세 결함의 실제 크기를 중성자 소각 산란법으로 측정하였다. 도금층의 결함의 개수는 도금 조건에 따라 변화하였으며 약 40 nm 크기의 극미세 결함이 주로 관찰되었다. 일정 전류 밀도에서 전압이 증가하면 극미세 균열의 량이 증가하였다. 본 연구를 통하여 중성자 소각 산란법이 크롬 도금층에 존재하는 극미세 결함의 크기를 비파괴적으로 측정할 수 있음을 알 수 있었다. The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40 nm. The number of nano-size defects less than about 40 nm of the trivalent chromium layer increases with plating voltage at constant current density. From this study, SANS is proved as one of useful techniques to evaluate nano-size defects of thin film layer. KCI Citation Count: 0
The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-size defects less than about 40nm of the trivalent chromium layer increases with plating voltage at constant current density From this study, SANS is proved as one of useful techniques to evaluate nano-size defects of thin film layer.
Author 최용
Choi, Yong
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Chromium-carbon
Trivalent chromium bath
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Snippet The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin...
전착된 3가 크롬 도금층 내의 극미세 결함의 실제 크기를 중성자 소각 산란법으로 측정하였다. 도금층의 결함의 개수는 도금 조건에 따라 변화하였으며 약 40 nm 크기의...
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Title 3가 크롬 박막 내의 극미세 결함 측정을 위한 중성자 소각 산란법의 적용
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