3가 크롬 박막 내의 극미세 결함 측정을 위한 중성자 소각 산란법의 적용
The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-...
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Published in | 한국표면공학회지 Vol. 37; no. 3; pp. 175 - 178 |
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Main Authors | , |
Format | Journal Article |
Language | Korean |
Published |
한국표면공학회
2004
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Subjects | |
Online Access | Get full text |
ISSN | 1225-8024 2288-8403 |
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Summary: | The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-size defects less than about 40nm of the trivalent chromium layer increases with plating voltage at constant current density From this study, SANS is proved as one of useful techniques to evaluate nano-size defects of thin film layer. |
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Bibliography: | KISTI1.1003/JNL.JAKO200411922377116 G704-000261.2004.37.3.004 |
ISSN: | 1225-8024 2288-8403 |