3차원 적층 패키지를 위한 Cu/thin Sn/Cu 범프구조의 금속간화합물 성장거동분석
Isothermal annealing and electromigration tests were performed at 125℃ and 125℃, 3.6×104 A/cm2 conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. Cu6Sn5 and Cu3Sn formed at the Cu/thin Sn/Cu interfaces where most of the Sn...
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Published in | 대한금속·재료학회지, 49(2) Vol. 49; no. 2; pp. 180 - 186 |
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Main Authors | , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | Korean |
Published |
대한금속재료학회
20.02.2011
대한금속·재료학회 |
Subjects | |
Online Access | Get full text |
ISSN | 1738-8228 2288-8241 |
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Summary: | Isothermal annealing and electromigration tests were performed at 125℃ and 125℃, 3.6×104 A/cm2 conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. Cu6Sn5 and Cu3Sn formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the Cu6Sn5 phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the Cu3Sn phase at the Cu pillar/Cu6Sn5 interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from Cu6Sn5 to Cu3Sn phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics. |
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Bibliography: | The Korean Institute of Metals and Materials G704-000085.2011.49.2.004 |
ISSN: | 1738-8228 2288-8241 |