ITO 박막의 공정변수에 따른 특성 연구
ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition co...
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| Published in | Biuletyn Uniejowski Vol. 37; no. 3; pp. 158 - 163 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | Korean |
| Published |
한국표면공학회
2004
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1225-8024 2299-8403 2288-8403 |
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| Abstract | ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively. |
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| AbstractList | ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800~2300Å thickness, 65mm substrate-to-target distance, 350oC substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86W/□, respectively. KCI Citation Count: 0 ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively. |
| Author | 김소라(So-Ra Kim) 김상호(Sang-Ho Kim) 서정은(Jung-Eun Seo) |
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| Keywords | RF Sputtering Transmittance Sheet resistance Process parameters Indium Tin Oxide (ITO) |
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| Title | ITO 박막의 공정변수에 따른 특성 연구 |
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