ITO 박막의 공정변수에 따른 특성 연구

ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition co...

Full description

Saved in:
Bibliographic Details
Published inBiuletyn Uniejowski Vol. 37; no. 3; pp. 158 - 163
Main Authors 김소라(So-Ra Kim), 서정은(Jung-Eun Seo), 김상호(Sang-Ho Kim)
Format Journal Article
LanguageKorean
Published 한국표면공학회 2004
Subjects
Online AccessGet full text
ISSN1225-8024
2299-8403
2288-8403

Cover

More Information
Summary:ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively.
Bibliography:KISTI1.1003/JNL.JAKO200411922377075
G704-000261.2004.37.3.003
ISSN:1225-8024
2299-8403
2288-8403