坂, 公. (2017). 4H-SiCエピ層中の転位. Journal of the Vacuum Society of Japan, 60(8), 285-291. https://doi.org/10.3131/jvsj2.60.285
Chicago Style (17th ed.) Citation坂, 公恭. "4H-SiCエピ層中の転位." Journal of the Vacuum Society of Japan 60, no. 8 (2017): 285-291. https://doi.org/10.3131/jvsj2.60.285.
MLA (9th ed.) Citation坂, 公恭. "4H-SiCエピ層中の転位." Journal of the Vacuum Society of Japan, vol. 60, no. 8, 2017, pp. 285-291, https://doi.org/10.3131/jvsj2.60.285.
Warning: These citations may not always be 100% accurate.