Optimized delta sigma modulation for Class-S power amplifiers based on GaN switching transistors

A novel modulation concept based on Delta-Sigma modulation dedicated for a Class-S Amplifier based on GaN technology is presented. This paper includes system considerations of efficient modulation schemes for GaN switching transistors, which suffer from many limits. The analyses are focused on evalu...

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Bibliographic Details
Published in2009 IEEE Radio and Wireless Symposium pp. 546 - 549
Main Authors Samulak, A., Fischer, G., Weigel, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2009
Subjects
Circuits
Class-S amplifier
Delta modulation
Delta Sigma Modulation
Frequency
Gallium nitride
GaN transistors
High power amplifiers
Manchester encoding
Power amplifiers
Pulse amplifiers
Pulse modulation
Switches
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ISBN9781424426980
1424426987
ISSN2164-2958
DOI10.1109/RWS.2009.4957409

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Summary:A novel modulation concept based on Delta-Sigma modulation dedicated for a Class-S Amplifier based on GaN technology is presented. This paper includes system considerations of efficient modulation schemes for GaN switching transistors, which suffer from many limits. The analyses are focused on evaluating the impact of modulation scheme on the switching conditions of the transistors. Moreover practical figures of merits are introduced for defining optimum modulation strategy. Simulations are performed for a carrier frequency of 890.88 MHz for UMTS 5 MHz bandwidth signal. Results describe the main differences and limits of modulation schemes dedicated for switching mode power amplifiers.
ISBN:9781424426980
1424426987
ISSN:2164-2958
DOI:10.1109/RWS.2009.4957409