An adaptive grid algorithm for self-consistent k·p Schrodinger and Poisson equations in UTB InSb-based pMOSFETs

Hole mobility in ultra-thin body (UTB) InSb-OI devices is calculated by a microscopic approach. An adaptive grid algorithm is employed to discretize 2-D k space. The accurate valence band structures are obtained via solving the 6-band k·p Schrödinger and Poisson equations self-consistently. Hole mo...

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Bibliographic Details
Published in2014 International Workshop on Computational Electronics (IWCE) pp. 1 - 4
Main Authors Pengying Chang, Xiaoyan Liu, Lang Zeng, Kangliang Wei, Gang Du
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Acoustics
hole mobility
III-V
InSb
modeling
MOSFET
Optical scattering
Phonons
Poisson equations
scattering
Silicon
six band k·p
UTB
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DOI10.1109/IWCE.2014.6865845

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Summary:Hole mobility in ultra-thin body (UTB) InSb-OI devices is calculated by a microscopic approach. An adaptive grid algorithm is employed to discretize 2-D k space. The accurate valence band structures are obtained via solving the 6-band k·p Schrödinger and Poisson equations self-consistently. Hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar acoustic and optical phonons, polar optical phonons, and surface roughness scattering mechanisms.
DOI:10.1109/IWCE.2014.6865845