APA (7th ed.) Citation

Arakawa, S., Mizuno, I., Ohoka, Y., Nagahata, K., Tabuchi, K., Kanamura, R., & Kadomura, S. (2006). Breakthrough Integration of 32nm-node CulCntra Low-k SiOC (k=2.0) Interconnects by using Advanced Pore-Sealing and Low-k Hard Mask Technologies. Proceedings of the IEEE International Interconnect Technology Conference, 210-212. https://doi.org/10.1109/IITC.2006.1648690

Chicago Style (17th ed.) Citation

Arakawa, S., I. Mizuno, Y. Ohoka, K. Nagahata, K. Tabuchi, R. Kanamura, and S. Kadomura. "Breakthrough Integration of 32nm-node CulCntra Low-k SiOC (k=2.0) Interconnects by Using Advanced Pore-Sealing and Low-k Hard Mask Technologies." Proceedings of the IEEE International Interconnect Technology Conference 2006: 210-212. https://doi.org/10.1109/IITC.2006.1648690.

MLA (9th ed.) Citation

Arakawa, S., et al. "Breakthrough Integration of 32nm-node CulCntra Low-k SiOC (k=2.0) Interconnects by Using Advanced Pore-Sealing and Low-k Hard Mask Technologies." Proceedings of the IEEE International Interconnect Technology Conference, 2006, pp. 210-212, https://doi.org/10.1109/IITC.2006.1648690.