A 1-W/mm2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding Techniques
We present a design technique for high-power density with stacked devices in power amplifiers at 140-GHz. A theory of embedding networks that simultaneously match multiple stacked transistors subject to loadline constraints is demonstrated using two prototype networks. A 90-nm silicon-germanium powe...
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| Published in | IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (Online) pp. 53 - 56 |
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| Main Authors | , |
| Format | Conference Proceeding |
| Language | English |
| Published |
IEEE
16.10.2022
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| Subjects | |
| Online Access | Get full text |
| ISSN | 2831-4999 |
| DOI | 10.1109/BCICTS53451.2022.10051692 |
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| Abstract | We present a design technique for high-power density with stacked devices in power amplifiers at 140-GHz. A theory of embedding networks that simultaneously match multiple stacked transistors subject to loadline constraints is demonstrated using two prototype networks. A 90-nm silicon-germanium power amplifier is presented at D-band (140 GHz) using a single stage PA and a two-stage, power-combined PA. The PAs demonstrate peak power-added efficiency (PAE) of 10.8% and a power density of 990mW/mm 2 . To our knowledge, this is the highest D-band power density for a silicon process. |
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| AbstractList | We present a design technique for high-power density with stacked devices in power amplifiers at 140-GHz. A theory of embedding networks that simultaneously match multiple stacked transistors subject to loadline constraints is demonstrated using two prototype networks. A 90-nm silicon-germanium power amplifier is presented at D-band (140 GHz) using a single stage PA and a two-stage, power-combined PA. The PAs demonstrate peak power-added efficiency (PAE) of 10.8% and a power density of 990mW/mm 2 . To our knowledge, this is the highest D-band power density for a silicon process. |
| Author | Buckwalter, James F. O'Malley, Everett |
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| Snippet | We present a design technique for high-power density with stacked devices in power amplifiers at 140-GHz. A theory of embedding networks that simultaneously... |
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| SubjectTerms | D-band Density measurement embedding network Heterojunction bipolar transistors Integrated circuits mm-wave power added efficiency power amplifier Power amplifiers power density Power system measurements Prototypes Silicon transistor stacking |
| Title | A 1-W/mm2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding Techniques |
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